S1GHE3/5AT
DIODE GEN PURP 400V 1A DO214ACManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division S1GHE3-5AT is a general-purpose diode designed for standard recovery applications. This component features a maximum DC reverse voltage (Vr) of 400 V and an average rectified forward current (Io) of 1 A. The forward voltage (Vf) is rated at a maximum of 1.1 V at 1 A. Reverse leakage current at 400 V is a low 1 µA. With a reverse recovery time (trr) of 1.8 µs and a capacitance of 12 pF at 4V and 1MHz, this diode is suitable for applications requiring moderate switching speeds. The S1GHE3-5AT is housed in a DO-214AC (SMA) surface mount package and operates across a junction temperature range of -55°C to 150°C. It is supplied in tape and reel packaging. This component finds utility in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.8 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 12pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 400 V |
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