S1DHE3/61T
DIODE GEN PURP 200V 1A DO214ACManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
Quality Control: Learn More
Vishay General Semiconductor - Diodes Division S1DHE3-61T is a general-purpose diode with a maximum DC reverse voltage of 200 V and an average rectified current capability of 1 A. This surface-mount component, housed in a DO-214AC (SMA) package, features a forward voltage drop of 1.1 V at 1 A. It exhibits a low reverse leakage current of 1 µA at its maximum reverse voltage. The diode's capacitance is rated at 12 pF with a reverse bias of 4 V at 1 MHz. With a reverse recovery time of 1.8 µs, it is classified under standard recovery speed. Operating across a junction temperature range of -55°C to 150°C, this Vishay General Semiconductor - Diodes Division component is suitable for applications in the industrial and automotive sectors. The S1DHE3-61T is supplied in standard tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.8 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 12pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 200 V |
Request a Quote
Clients Also Buy
BYWB29-150HE3_A/P
DIODE GEN PURP 150V 8A TO263AB
SS1FL3HM3/I
DIODE SCHOTTKY 30V 1A DO219AB
VS-2EYH02-M3/I
DIODE GEN PURP 200V 2A SLIMSMAW
