S1AHE3/61T
DIODE GEN PURP 50V 1A DO214ACManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division S1AHE3-61T is a general-purpose diode designed for standard recovery applications. This component features a 50V DC reverse voltage rating and an average rectified forward current capability of 1A. The forward voltage drop is specified at a maximum of 1.1V at 1A. Leakage current is minimal, at 1 µA at 50V reverse voltage. The diode exhibits a reverse recovery time of 1.8 µs. Capacitance is rated at 12pF at 4V. Packaged in a DO-214AC (SMA) surface-mount case and supplied on tape and reel, the S1AHE3-61T operates across a junction temperature range of -55°C to 150°C. This diode is suitable for use in various industrial and consumer electronics applications requiring reliable rectification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.8 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 12pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 50 V |
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