RS3KHE3/9AT
DIODE GEN PURP 800V 3A DO214ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division RS3KHE3-9AT is a general-purpose diode designed for high-voltage applications. This component boasts a maximum DC reverse voltage of 800 V and an average rectified forward current capability of 3 A. The diode features a fast recovery time of 500 ns, suitable for applications requiring efficient switching. Its forward voltage drop is specified at a maximum of 1.3 V at 2.5 A. The device is packaged in a DO-214AB (SMC) surface-mount package, delivered on tape and reel. Typical applications for this diode include power supplies, lighting, and automotive electronics. The reverse leakage current is a low 10 µA at 800 V, and junction capacitance is 34 pF at 4 V and 1 MHz. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 500 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 34pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 2.5 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 800 V |
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