RS2GHE3/5BT
DIODE GEN PURP 400V 1.5A DO214AAManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
Quality Control: Learn More
Vishay General Semiconductor - Diodes Division RS2GHE3-5BT is a general-purpose diode with a maximum repetitive reverse voltage of 400V. This surface mount device, housed in a DO-214AA (SMB) package, offers an average rectified forward current of 1.5A. It features a forward voltage drop of 1.3V at 1.5A and a reverse leakage current of 5 µA at 400V. The Vishay General Semiconductor - Diodes Division RS2GHE3-5BT exhibits a reverse recovery time of 150 ns, classifying it as a fast recovery diode. Its operating junction temperature range is -55°C to 150°C. This component is commonly utilized in power supply rectification, switching power supplies, and general rectification applications across various industrial and consumer electronics sectors. The device is supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AA, SMB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 20pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1.5A |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 1.5 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 400 V |
Request a Quote
Clients Also Buy
BYWB29-150HE3_A/P
DIODE GEN PURP 150V 8A TO263AB
SS1FL3HM3/I
DIODE SCHOTTKY 30V 1A DO219AB
VS-2EYH02-M3/I
DIODE GEN PURP 200V 2A SLIMSMAW
