RS1KHE3/5AT
DIODE GEN PURP 800V 1A DO214ACManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division RS1KHE3-5AT is a general-purpose diode engineered for high-voltage applications. This component features a maximum DC reverse voltage (Vr) of 800 V and an average rectified current (Io) of 1 A. The forward voltage (Vf) is rated at 1.3 V maximum at 1 A. With a reverse leakage of only 5 µA at 800 V, it demonstrates efficient blocking characteristics. The diode's fast recovery time (trr) of 500 ns, coupled with its 1 A current capability, categorizes it as a fast recovery diode. Designed for surface mount installations within the DO-214AC (SMA) package, this device operates across a junction temperature range of -55°C to 150°C. Its low capacitance of 7 pF at 4 V and 1 MHz makes it suitable for power supply rectification and general-purpose switching in industrial and consumer electronics. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 500 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 7pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 800 V |
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