NSB8KTHE3/81
DIODE GEN PURP 800V 8A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
Quality Control: Learn More
Vishay General Semiconductor - Diodes Division NSB8KTHE3-81 is an 8A, 800V general-purpose rectifier diode in a TO-263AB (D2PAK) surface-mount package. This AEC-Q101 qualified component features a maximum forward voltage of 1.1V at 8A and a reverse leakage current of 10 µA at 800V. Its standard recovery speed exceeds 500ns for Io > 200mA, with a junction capacitance of 55pF at 4V and 1MHz. The operating temperature range is -55°C to 150°C. This diode is suitable for applications in the automotive industry requiring reliable rectification and power handling in a compact surface-mount form factor.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | 55pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 800 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
BYWB29-150HE3_A/P
DIODE GEN PURP 150V 8A TO263AB
SS1FL3HM3/I
DIODE SCHOTTKY 30V 1A DO219AB
VS-2EYH02-M3/I
DIODE GEN PURP 200V 2A SLIMSMAW
