NSB8KT-E3/81
DIODE GEN PURP 800V 8A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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The Vishay General Semiconductor - Diodes Division NSB8KT-E3-81 is a general-purpose diode designed for robust performance in demanding applications. This surface-mount component, housed in a TO-263AB (D2PAK) package, features a maximum DC reverse voltage (Vr) of 800 V and an average rectified forward current (Io) of 8 A. The forward voltage drop (Vf) is rated at a maximum of 1.1 V at 8 A, with a typical reverse leakage current of 10 µA at 800 V. Its standard recovery speed exceeds 500 ns for currents greater than 200 mA (Io). The junction operating temperature range is -55°C to 150°C, and it has a capacitance of 55 pF at 4 V and 1 MHz. This component is commonly utilized in power supply rectification, industrial automation, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | 55pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 800 V |
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