NSB8KT-E3/45
DIODE GEN PURP 800V 8A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division NSB8KT-E3-45 is an 8A, 800V general-purpose diode. This surface-mount component, housed in a TO-263AB (D2PAK) package, features a standard recovery time exceeding 500ns. With a maximum forward voltage of 1.1V at 8A and a reverse leakage current of 10µA at 800V, it offers efficient rectification. The junction operating temperature range is -55°C to 150°C. This diode is suitable for applications in power supplies, industrial automation, and automotive systems where robust rectification and high voltage handling are critical. Its capacitance at 4V and 1MHz is 55pF.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | 55pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 800 V |
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