NSB8JT-E3/81
DIODE GEN PURP 600V 8A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division NSB8JT-E3-81 is a general-purpose rectifier diode offering a 600V reverse voltage and an 8A average rectified forward current. This surface mount component, packaged in a TO-263AB (D2PAK), features a standard recovery time exceeding 500ns at 8A. The forward voltage drop is a maximum of 1.1V at 8A, and reverse leakage current is rated at 10 µA at 600V. Capacitance is specified at 55pF at 4V and 1MHz. The operating junction temperature range is -55°C to 150°C. This diode is suitable for applications in power supply, industrial, and automotive sectors where robust rectification is required.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | 55pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
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