NSB8JT-E3/45
DIODE GEN PURP 600V 8A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division NSB8JT-E3-45 is a 600V, 8A general-purpose diode in a TO-263AB (D2PAK) surface-mount package. This standard recovery diode features a maximum forward voltage of 1.1V at 8A and a reverse leakage of 10 µA at 600V. The junction operating temperature range is -55°C to 150°C. With a capacitance of 55pF at 4V and 1MHz, this component is suitable for power supply, industrial, and automotive applications. It is supplied in a tube package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | 55pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
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