NSB8DT-E3/81
DIODE GEN PURP 200V 8A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
Quality Control: Learn More
Vishay General Semiconductor - Diodes Division NSB8DT-E3-81 is a general-purpose diode featuring a 200V reverse voltage rating and an 8A average rectified current. This surface-mount device, housed in a TO-263AB (D2PAK) package, offers a standard recovery time exceeding 500ns for currents greater than 200mA. Its forward voltage drop is a maximum of 1.1V at 8A. The diode exhibits a low reverse leakage current of 10 µA at its maximum reverse voltage. With a junction operating temperature range of -55°C to 150°C, this component is suitable for applications in industrial power supplies, automotive electronics, and general rectification. The capacitance at 4V and 1MHz is 55pF. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | 55pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
Request a Quote
Clients Also Buy
GP15M-E3/73
DIODE GEN PURP 1KV 1.5A DO204AC
V30KM120-M3/H
DIODE SCHOTTKY 120V 4.1A FLATPAK
V7NL63-M3/I
7A, 60V, DFN3820A TRENCH SKY REC
