NS8JTHE3/45
DIODE GEN PURP 600V 8A TO220ACManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
Quality Control: Learn More
The Vishay General Semiconductor - Diodes Division NS8JTHE3-45 is a general-purpose rectifier diode designed for high-voltage applications. Featuring a 600V reverse voltage rating and an 8A average rectified current capability, this component is suitable for demanding power supply and conversion circuits. Its standard recovery speed, characterized by a non-snap-off time greater than 500ns for currents exceeding 200mA, ensures reliable operation in various power management designs. The diode's forward voltage drop is a maximum of 1.1V at 8A, contributing to efficient power transfer. Encased in a TO-220AC package for through-hole mounting, the NS8JTHE3-45 operates reliably across a wide temperature range from -55°C to 150°C. With AEC-Q101 qualification, it meets the stringent requirements for automotive applications, including power systems and control modules. The low reverse leakage current of 10 µA at 600V further enhances its performance in critical systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
BYWB29-150HE3_A/P
DIODE GEN PURP 150V 8A TO263AB
SS1FL3HM3/I
DIODE SCHOTTKY 30V 1A DO219AB
VS-2EYH02-M3/I
DIODE GEN PURP 200V 2A SLIMSMAW
