MURS160HE3/52T
DIODE GEN PURP 600V 2A DO214AAManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division MURS160HE3-52T is a general-purpose diode designed for efficient rectification. This surface-mount component, housed in a DO-214AA (SMB) package, features a maximum DC reverse voltage of 600 V and an average rectified forward current handling capability of 2 A. It exhibits a low reverse leakage current of 5 µA at 600 V and a forward voltage drop of 1.25 V at 1 A. The diode’s fast recovery time of 75 ns positions it for applications requiring rapid switching. Operating across a junction temperature range of -65°C to 175°C, this device is commonly deployed in power supply units, industrial controls, and automotive electronics. The MURS160HE3-52T is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AA, SMB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
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