MBRB10H35-E3/81
DIODE SCHOTTKY 35V 10A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
Quality Control: Learn More
Vishay General Semiconductor - Diodes Division MBRB10H35-E3-81 is a 35V Schottky diode with a 10A average rectified current rating. This surface mount device, housed in a TO-263AB (D2PAK) package, features a maximum forward voltage of 850mV at 20A and a reverse leakage of 100 µA at 35V. Designed for efficient power management, it is suitable for applications requiring fast switching and low forward voltage drop, such as power supplies, inverters, and automotive electronics. The component operates across a junction temperature range of -65°C to 175°C and is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 35 V |
| Voltage - Forward (Vf) (Max) @ If | 850 mV @ 20 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 35 V |
Request a Quote
Clients Also Buy
BYWB29-150HE3_A/P
DIODE GEN PURP 150V 8A TO263AB
SS1FL3HM3/I
DIODE SCHOTTKY 30V 1A DO219AB
VS-2EYH02-M3/I
DIODE GEN PURP 200V 2A SLIMSMAW
