GI856-E3/73
DIODE GEN PURP 600V 3A DO201ADManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
Quality Control: Learn More
Vishay General Semiconductor general-purpose diode, part number GI856-E3-73. This axial leaded device features a 600V reverse voltage rating and a 3A average rectified forward current. With a maximum forward voltage of 1.25V at 3A, this diode is constructed with standard technology. The device exhibits a reverse leakage of 10 µA at 600V and a capacitance of 28pF at 4V and 1MHz. The reverse recovery time (trr) is rated at 200 ns, classifying it as a fast recovery diode. The GI856-E3-73 is housed in a DO-201AD package and is suitable for through-hole mounting. Operating junction temperatures range from -50°C to 150°C. This component finds application in various power supply designs, industrial control systems, and consumer electronics. The packaging is Tape & Box (TB).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | DO-201AD, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 200 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 28pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-201AD |
| Operating Temperature - Junction | -50°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
Request a Quote
Clients Also Buy
BYWB29-150HE3_A/P
DIODE GEN PURP 150V 8A TO263AB
SS1FL3HM3/I
DIODE SCHOTTKY 30V 1A DO219AB
VS-2EYH02-M3/I
DIODE GEN PURP 200V 2A SLIMSMAW
