FESB8JT-E3/81
DIODE GEN PURP 600V 8A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division FESB8JT-E3-81 is a general-purpose diode designed for demanding applications. This surface-mount component, packaged in a TO-263AB (D2PAK), features a 600 V reverse voltage rating and an average rectified forward current capability of 8 A. Its forward voltage drop is a maximum of 1.5 V at 8 A. The diode exhibits a reverse leakage current of only 10 µA at its maximum reverse voltage. With a fast recovery time of 50 ns, it is suitable for applications requiring efficient switching. The operating junction temperature range is -55°C to 150°C. This component is commonly utilized in power supply rectification, inversion, and freewheeling circuits across industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
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