FESB8GT-E3/45
DIODE GEN PURP 400V 8A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division FESB8GT-E3-45 is a general-purpose diode designed for demanding applications. This TO-263AB (D2PAK) surface-mount component features a 400 V reverse voltage rating and an 8 A average rectified forward current capability. Its fast recovery characteristic, with a reverse recovery time of 50 ns, makes it suitable for power supply circuits and switching applications. The diode exhibits a maximum forward voltage drop of 1.3 V at 8 A and a low reverse leakage current of 10 µA at its rated reverse voltage. Operating across a wide junction temperature range of -55°C to 150°C, this device is commonly found in industrial power control, automotive electronics, and consumer appliance systems. The TO-263-3, D2PAK package offers robust thermal performance for high-current operations.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 400 V |
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