FESB16JT-E3/45
DIODE GEN PURP 600V 16A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division FESB16JT-E3-45 is a general-purpose diode with a 600 V reverse voltage rating and 16 A average rectified current capability. This surface mount device, housed in a TO-263AB (D2PAK) package, features a fast recovery time of 50 ns. The forward voltage drop is 1.5 V at 16 A, and the reverse leakage current is a low 10 µA at 600 V. With a junction operating temperature range of -65°C to 150°C, this component is suitable for high-power applications. Its capacitance is rated at 145 pF at 4 V and 1 MHz. This diode is commonly utilized in power supply rectification, inverters, and motor control circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 145pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 16A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 16 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Qualification | - |
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