FESB16DT-E3/81
DIODE GEN PURP 200V 16A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division presents the FESB16DT-E3-81, a general-purpose diode designed for demanding applications. This component offers a 200V reverse voltage capability and a continuous forward current rating of 16A. With a fast recovery time of 35ns, it is suitable for power switching applications. The Vishay FESB16DT-E3-81 features a low forward voltage drop of 975mV at 16A and a low leakage current of 10µA at its maximum reverse voltage. Its TO-263AB (D2PAK) surface mount package facilitates efficient thermal management. Typical applications include power supplies, inverters, and motor control systems. Capacitance is rated at 175pF at 4V and 1MHz. The operating junction temperature range is -65°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 175pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 16A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 975 mV @ 16 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Qualification | - |
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