FESB16BT-E3/45
DIODE GEN PURP 100V 16A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division FESB16BT-E3-45 is a general-purpose diode designed for demanding applications. This surface-mount device, housed in a TO-263AB (D2PAK) package, offers a maximum reverse voltage of 100V and an average rectified forward current of 16A. Its forward voltage drop is rated at a maximum of 975mV at 16A. The FESB16BT-E3-45 exhibits a fast recovery time of 35ns and a reverse leakage current of 10 µA at 100V, with a junction capacitance of 175pF at 4V and 1MHz. Operating across a temperature range of -65°C to 150°C, it is suitable for power supply rectification, motor control, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 175pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 16A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 975 mV @ 16 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
| Qualification | - |
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