FESB16AT-E3/81
DIODE GEN PURP 50V 16A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division FESB16AT-E3-81 is a general-purpose diode with a 50V reverse voltage rating and a 16A average rectified current capability. This surface mount component, housed in a TO-263AB (D2PAK) package, features a forward voltage drop of 975mV at 16A. The diode exhibits a reverse leakage current of 10µA at its maximum reverse voltage. With a reverse recovery time of 35ns, it is classified as a fast recovery diode suitable for applications requiring switching speeds within the 200mA to 500ns range for Io. Operating temperature ranges from -65°C to 150°C. Capacitance is specified at 175pF at 4V and 1MHz. This component is commonly utilized in power supply rectification and general switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 175pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 16A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 975 mV @ 16 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 50 V |
| Qualification | - |
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