ESH3BHE3/57T
DIODE GEN PURP 100V 3A DO214ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division ESH3BHE3-57T is a fast recovery general-purpose diode with a 100V reverse voltage rating and 3A average rectified forward current. This AEC-Q101 qualified component features a low 5 µA reverse leakage at its maximum reverse voltage and a forward voltage drop of 900 mV at 3A. The Vishay General Semiconductor - Diodes Division ESH3BHE3-57T is housed in a DO-214AB (SMC) surface mount package and operates across a temperature range of -55°C to 175°C. Its fast recovery time of 40 ns makes it suitable for applications in automotive power management and general rectification. The component is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 40 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 900 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
| Qualification | AEC-Q101 |
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