ESH2DHE3/52T
DIODE GEN PURP 200V 2A DO214AAManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division ESH2DHE3-52T is a fast recovery general-purpose diode. This AEC-Q101 qualified component is housed in a DO-214AA (SMB) surface-mount package, suitable for high-temperature operation from -55°C to 175°C. It offers a 2A average rectified current capability and a maximum DC reverse voltage of 200V. The forward voltage drop is 930mV at 2A, with a reverse leakage current of 2µA at 200V. Featuring a reverse recovery time of 35ns, this diode is designed for applications requiring efficient rectification and fast switching characteristics. Its automotive grade qualification makes it suitable for use in automotive electronics and other demanding industrial applications. Supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AA, SMB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 930 mV @ 2 A |
| Current - Reverse Leakage @ Vr | 2 µA @ 200 V |
| Qualification | AEC-Q101 |
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