ES3FHE3/9AT
DIODE GEN PURP 300V 3A DO214ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division ES3FHE3-9AT is a general-purpose diode with a 300 V reverse voltage rating and a 3 A average rectified forward current. This surface mount component, packaged in a DO-214AB (SMC) case, features a fast recovery time of 50 ns and a forward voltage drop of 1.1 V at 3 A. The device exhibits a low reverse leakage current of 10 µA at 300 V. Designed for demanding applications, it operates across a junction temperature range of -55°C to 150°C and is AEC-Q101 qualified, making it suitable for automotive applications. Its capacitance at 4 V and 1 MHz is 30 pF. The ES3FHE3-9AT is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 300 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 300 V |
| Qualification | AEC-Q101 |
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