ES3DHE3/9AT
DIODE GEN PURP 200V 3A DO214ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division ES3DHE3-9AT is a general-purpose diode designed for high-reliability applications. This surface-mount component, housed in a DO-214AB (SMC) package, offers a 200V reverse voltage (Vr) and a 3A average rectified current (Io). It features a fast recovery time of 30ns, suitable for switching applications. The forward voltage (Vf) is a maximum of 900mV at 3A, with a reverse leakage current of 10µA at 200V. The device boasts a low capacitance of 45pF at 4V and 1MHz. Qualified to AEC-Q101 standards and designated as Automotive grade, the ES3DHE3-9AT is engineered for demanding environments in automotive and industrial sectors. It is supplied on tape and reel for efficient automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 45pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 900 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Qualification | AEC-Q101 |
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