ES2GHE3/5BT
DIODE GEN PURP 400V 2A DO214AAManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division ES2GHE3-5BT is a general-purpose diode designed for demanding applications. This AEC-Q101 qualified component features a 400V reverse voltage (Vr) and a 2A average rectified current (Io). The ES2GHE3-5BT exhibits a forward voltage (Vf) of 1.1V at 2A and a low reverse leakage current of 10 µA at its maximum Vr. With a typical capacitance of 15pF at 4V and 1MHz, and a reverse recovery time (trr) of 50 ns, this diode is classified as fast recovery. It is housed in a DO-214AA (SMB) surface mount package and operates within a junction temperature range of -50°C to 150°C. This component is commonly utilized in automotive and industrial power management systems. The ES2GHE3-5BT is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AA, SMB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -50°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 2 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 400 V |
| Qualification | AEC-Q101 |
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