ES2GHE3/52T
DIODE GEN PURP 400V 2A DO214AAManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
Quality Control: Learn More
Vishay General Semiconductor - Diodes Division presents the ES2GHE3-52T, a general-purpose rectifier diode. This component features a 400V reverse voltage rating and a 2A average rectified current capability. Designed for surface mounting within the DO-214AA (SMB) package, it offers a low forward voltage drop of 1.1V at 2A and a reverse leakage current of 10 µA at 400V. The diode exhibits a fast recovery time of 50 ns, classifying it as a fast recovery diode. With a junction operating temperature range of -55°C to 150°C and AEC-Q101 qualification, the ES2GHE3-52T is suitable for automotive applications. Its capacitance is rated at 15pF at 4V and 1MHz. This device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AA, SMB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 2 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 400 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
BYWB29-150HE3_A/P
DIODE GEN PURP 150V 8A TO263AB
SS1FL3HM3/I
DIODE SCHOTTKY 30V 1A DO219AB
VS-2EYH02-M3/I
DIODE GEN PURP 200V 2A SLIMSMAW
