ES1BHE3/61T
DIODE GEN PURP 100V 1A DO214ACManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
Quality Control: Learn More
Vishay General Semiconductor - Diodes Division ES1BHE3-61T is a general-purpose diode with a 100V reverse voltage rating and a 1A average rectified forward current. This AEC-Q101 qualified component features a fast recovery time of 25ns, suitable for applications requiring efficient rectification. The forward voltage drop at 1A is a maximum of 920mV. It exhibits a low reverse leakage current of 5µA at 100V and a junction capacitance of 10pF at 4V and 1MHz. The ES1BHE3-61T is housed in a DO-214AC (SMA) surface-mount package, ideal for space-constrained designs. This diode is commonly employed in automotive, power supply, and general electronic circuits where reliable rectification and fast switching are critical. The component is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 10pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 920 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
BYWB29-150HE3_A/P
DIODE GEN PURP 150V 8A TO263AB
SS1FL3HM3/I
DIODE SCHOTTKY 30V 1A DO219AB
VS-2EYH02-M3/I
DIODE GEN PURP 200V 2A SLIMSMAW
