ES1BHE3/5AT
DIODE GEN PURP 100V 1A DO214ACManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division ES1BHE3-5AT is a general-purpose, fast recovery diode with a repetitive peak reverse voltage of 100V. This surface-mount component, packaged in a DO-214AC (SMA) case, offers a high forward current rating of 1A and a low forward voltage drop of 920mV at 1A. Its reverse leakage current is a mere 5 µA at 100V. Featuring a reverse recovery time of 25ns, this AEC-Q101 qualified device is suitable for automotive applications. The capacitance at 4V and 1MHz is specified at 10pF. This component is designed for operation across a junction temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 10pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 920 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
| Qualification | AEC-Q101 |
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