ES1AHE3/5AT
DIODE GEN PURP 50V 1A DO214ACManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division ES1AHE3-5AT is a general-purpose diode designed for efficient rectification. This AEC-Q101 qualified component features a 50 V reverse voltage (Vr) and a 1 A average rectified forward current (Io). The diode exhibits a maximum forward voltage (Vf) of 920 mV at 1 A and a low reverse leakage current of 5 µA at its maximum reverse voltage. With a typical capacitance of 10 pF at 4 V and 1 MHz, and a reverse recovery time (trr) of 25 ns, it operates effectively within a -55°C to 150°C junction temperature range. The ES1AHE3-5AT is housed in a DO-214AC (SMA) surface-mount package, supplied on tape and reel. This component is commonly utilized in automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 10pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 920 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 50 V |
| Qualification | AEC-Q101 |
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