CS2M-E3/H
DIODE GEN PURP 1KV 2A DO214AAManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division's CS2M-E3-H is a general-purpose diode designed for demanding applications. This component offers a maximum DC reverse voltage of 1000 V and an average rectified forward current of 2 A. Featuring a forward voltage drop of 1.2 V at 2 A, the CS2M-E3-H utilizes standard recovery technology with a reverse recovery time of 2.1 µs. Its low reverse leakage current of 5 µA at 1000 V and a junction capacitance of 12 pF at 4V (1MHz) contribute to its efficient operation. The SMB (DO-214AA) package facilitates surface mounting and is supplied in tape and reel packaging. This diode is suitable for use in power supply rectification, general switching, and industrial control systems. The operating junction temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AA, SMB |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2.1 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 12pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 2 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1000 V |
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