CS1M-E3/I
DIODE GEN PURP 1KV 1A DO214ACManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division CS1M-E3-I is a general-purpose silicon rectifier diode. This component features a 1000 V DC reverse voltage rating and a 1 A average rectified forward current capability. The forward voltage drop is a maximum of 1.1 V at 1 A. Reverse leakage current is rated at 5 µA at 1000 V. With a reverse recovery time of 1.5 µs, this diode is suitable for standard recovery applications. The capacitance at 4V and 1MHz is 6pF. It is housed in a DO-214AC (SMA) surface-mount package and operates within a junction temperature range of -55°C to 150°C. This device is commonly utilized in power supplies, automotive electronics, and general industrial applications requiring robust rectification. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 6pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1000 V |
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