BYWB29-200-E3/45
DIODE GEN PURP 200V 8A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
Quality Control: Learn More
Vishay General Semiconductor - Diodes Division BYWB29-200-E3-45 is a general-purpose diode designed for efficient power rectification. Featuring a 200V reverse voltage rating and an 8A average rectified current capacity, this component is housed in a TO-263AB (D2PAK) surface-mount package. Its fast recovery time of 25 ns, coupled with a low forward voltage drop of 1.3V at 20A, ensures optimal performance in demanding applications. The diode exhibits a minimal reverse leakage current of 10 µA at its maximum reverse voltage. Operating across a junction temperature range of -65°C to 150°C, the BYWB29-200-E3-45 is suitable for use in power supplies, automotive electronics, and industrial control systems requiring robust rectification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 20 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
Request a Quote
Clients Also Buy
V30KM120-M3/H
DIODE SCHOTTKY 120V 4.1A FLATPAK
BYWB29-150HE3_A/P
DIODE GEN PURP 150V 8A TO263AB
SS1FL3HM3/I
DIODE SCHOTTKY 30V 1A DO219AB
