BY229B-800HE3/81
DIODE GEN PURP 800V 8A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division BY229B-800HE3-81 is a high-voltage, fast-recovery general-purpose diode. Featuring a 800 V reverse voltage capability and an 8 A average rectified forward current, this device is designed for demanding applications. Its low reverse leakage current of 10 µA at 800 V and a forward voltage drop of 1.85 V at 20 A contribute to efficient operation. The diode is housed in a TO-263AB (D2PAK) surface-mount package, suitable for automated assembly processes. With a qualification to AEC-Q101 and an operating junction temperature range of -40°C to 150°C, it is engineered for automotive environments. The reverse recovery time (trr) is specified at 145 ns, marking it as a fast recovery diode. This component is commonly utilized in power supply circuits, automotive electronics, and industrial power control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 145 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.85 V @ 20 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 800 V |
| Qualification | AEC-Q101 |
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