8EWS12S
DIODE GEN PURP 1.2KV 8A DPAKManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division 8EWS12S is a general-purpose diode with a 1200 V reverse voltage and 8 A average rectified current. This surface mount device, packaged in a TO-252AA (DPAK) housing, features a standard recovery time exceeding 500 ns at 200 mA. The forward voltage drop is a maximum of 1.1 V at 8 A, with a reverse leakage current of 50 µA at 1200 V. Operating junction temperatures range from -55°C to 150°C. This component is suitable for applications in power supplies and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-252AA (DPAK) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 8 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
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