20ETS12S
DIODE GEN PURP 1.2KV 20A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division 20ETS12S is a general-purpose diode designed for demanding applications. This component features a 1200 V reverse voltage rating and a 20 A average rectified forward current capability. The forward voltage drop is specified at a maximum of 1.1 V at 20 A. Reverse leakage current is a low 100 µA at its maximum reverse voltage of 1200 V. This device utilizes standard recovery speed, typically greater than 500 ns for currents above 200 mA. The 20ETS12S is packaged in a TO-263AB (D2PAK) surface-mount package, facilitating efficient thermal management and board integration. Its robust construction and high voltage/current ratings make it suitable for power supply rectification, welding, and industrial motor control applications. The operating junction temperature range is -40°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 20 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
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