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1N5406-E3/51

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1N5406-E3/51

DIODE GEN PURP 600V 3A DO201AD

Manufacturer: Vishay General Semiconductor - Diodes Division

Categories: Single Diodes

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Vishay General Semiconductor - Diodes Division 1N5406-E3-51 is a general-purpose silicon rectifier diode. This through-hole component features a 600 V reverse voltage (Vr) and a maximum forward voltage (Vf) of 1.2 V at 3 A. The average rectified current (Io) is 3 A, with a reverse leakage current of 5 µA at 600 V. The diode's speed classification is Standard Recovery, exceeding 500 ns for speeds greater than 200 mA. It is housed in a DO-201AD axial package, suitable for applications requiring robust rectification. The operating junction temperature range is -50°C to 150°C. This component finds application in power supplies, converters, and general rectification circuits across various industrial and consumer electronics sectors. The capacitance at 4V and 1MHz is 30pF.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 4 week(s)Product Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseDO-201AD, Axial
Mounting TypeThrough Hole
SpeedStandard Recovery >500ns, > 200mA (Io)
TechnologyStandard
Capacitance @ Vr, F30pF @ 4V, 1MHz
Current - Average Rectified (Io)3A
Supplier Device PackageDO-201AD
Operating Temperature - Junction-50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.2 V @ 3 A
Current - Reverse Leakage @ Vr5 µA @ 600 V

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