VS-GT50TP60N
IGBT MOD 600V 85A 208W INT-A-PAKManufacturer: Vishay General Semiconductor - Diodes Division
Categories: IGBT Modules
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Vishay General Semiconductor - Diodes Division VS-GT50TP60N is a Trench IGBT Half Bridge module designed for robust power switching applications. This module features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 85A. With a maximum power dissipation of 208W and a low Vce(on) of 2.1V at 15V gate-emitter voltage and 50A collector current, it offers efficient operation. The input capacitance (Cies) is 3.03 nF at 30V. Operating up to a junction temperature of 175°C, this chassis-mount component is housed in an INT-A-PAK package. It is commonly utilized in industrial motor drives, uninterruptible power supplies (UPS), and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | INT-A-PAK (3 + 4) |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| NTC Thermistor | No |
| Supplier Device Package | INT-A-PAK |
| IGBT Type | Trench |
| Current - Collector (Ic) (Max) | 85 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 208 W |
| Current - Collector Cutoff (Max) | 1 mA |
| Input Capacitance (Cies) @ Vce | 3.03 nF @ 30 V |
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