VS-GT50TP120N
IGBT MOD 1200V 100A INT-A-PAKManufacturer: Vishay General Semiconductor - Diodes Division
Categories: IGBT Modules
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Vishay General Semiconductor - Diodes Division VS-GT50TP120N is a Trench IGBT Module featuring a half-bridge configuration. This chassis-mount device offers a 1200 V collector-emitter breakdown voltage and a maximum collector current (Ic) of 100 A. The module dissipates up to 405 W and has a Vce(on) of 2.35V at 15V gate-emitter voltage and 50A collector current. Input capacitance (Cies) is specified at 6.24 nF @ 30 V. The operating junction temperature range extends to 175°C. This component is suitable for industrial applications such as motor drives, power supplies, and renewable energy systems. The package type is INT-A-PAK.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | INT-A-PAK (3 + 4) |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 50A |
| NTC Thermistor | No |
| Supplier Device Package | INT-A-PAK |
| IGBT Type | Trench |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 405 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 6.24 nF @ 30 V |
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