VS-GT200TP065N
IGBT MOD 650V 221A INT-A-PAKManufacturer: Vishay General Semiconductor - Diodes Division
Categories: IGBT Modules
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The Vishay General Semiconductor - Diodes Division VS-GT200TP065N is a Trench IGBT module featuring a half-bridge configuration. This component offers a 650 V collector-emitter breakdown voltage and a maximum continuous collector current of 221 A. With a power dissipation of 600 W and a low on-state voltage of 2.12 V at 15 V gate-emitter voltage and 200 A collector current, it demonstrates efficient power handling. The module operates within a temperature range of -40°C to 175°C (TJ) and is designed for chassis mounting using the INT-A-PAK package. It finds application in industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | INT-A-PAK |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.12V @ 15V, 200A |
| NTC Thermistor | No |
| Supplier Device Package | INT-A-PAK |
| IGBT Type | Trench |
| Current - Collector (Ic) (Max) | 221 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Power - Max | 600 W |
| Current - Collector Cutoff (Max) | 60 µA |
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