VS-GT100TP60N
IGBT MOD 600V 160A INT-A-PAKManufacturer: Vishay General Semiconductor - Diodes Division
Categories: IGBT Modules
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Vishay General Semiconductor - Diodes Division VS-GT100TP60N is a Trench IGBT Module configured as a Half Bridge. This module features a 600 V collector-emitter breakdown voltage and a maximum collector current (Ic) of 160 A. The on-state voltage (Vce(on)) is specified at 2.1V at 15V Vge and 100A Ic. With a maximum power dissipation of 417 W and an operating junction temperature of 175°C, it is suitable for demanding applications. The module has an input capacitance (Cies) of 7.71 nF at 30 V. It is supplied in an INT-A-PAK package for chassis mounting. This component is utilized in industrial automation, power supplies, and motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | INT-A-PAK (3 + 4) |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 100A |
| NTC Thermistor | No |
| Supplier Device Package | INT-A-PAK |
| IGBT Type | Trench |
| Current - Collector (Ic) (Max) | 160 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 417 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 7.71 nF @ 30 V |
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