VS-GT100TP120N
IGBT MOD 1200V 180A INT-A-PAKManufacturer: Vishay General Semiconductor - Diodes Division
Categories: IGBT Modules
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Vishay General Semiconductor - Diodes Division presents the VS-GT100TP120N, a Trench IGBT Module in a Half Bridge configuration. This module is rated for a maximum collector-emitter voltage of 1200 V and a continuous collector current of 180 A. Featuring low Vce(on) of 2.35V at 15V Vge and 100A Ic, it offers efficient power handling with a maximum power dissipation of 652 W. The input capacitance (Cies) is 12.8 nF at 30 V. Designed for chassis mounting, the VS-GT100TP120N utilizes the INT-A-PAK package. This component is suitable for high-power applications in industries such as industrial motor drives, renewable energy inverters, and electric vehicle powertrains. The operating junction temperature can reach up to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | INT-A-PAK (3 + 4) |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 100A |
| NTC Thermistor | No |
| Supplier Device Package | INT-A-PAK |
| IGBT Type | Trench |
| Current - Collector (Ic) (Max) | 180 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 652 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 12.8 nF @ 30 V |
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