VS-GB75TP120N
IGBT MOD 1200V 150A INT-A-PAKManufacturer: Vishay General Semiconductor - Diodes Division
Categories: IGBT Modules
Quality Control: Learn More
Vishay General Semiconductor - Diodes Division VS-GB75TP120N is a Half Bridge Insulated Gate Bipolar Transistor (IGBT) module designed for high-power applications. This module features a collector-emitter breakdown voltage of 1200 V and a maximum continuous collector current (Ic) of 150 A. The on-state voltage drop (Vce(on)) is rated at 2.35 V at 15 V gate-emitter voltage and 75 A collector current. With a maximum power dissipation of 543 W and an operating junction temperature of 150°C, it is suitable for demanding environments. The module utilizes an INT-A-PAK package for chassis mounting, facilitating efficient thermal management. Typical applications include industrial motor drives, renewable energy inverters, and power supplies. The input capacitance (Cies) is 5.52 nF at 25 V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | INT-A-PAK (3 + 4) |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 75A |
| NTC Thermistor | No |
| Supplier Device Package | INT-A-PAK |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 543 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 5.52 nF @ 25 V |
Request a Quote
Clients Also Buy
VS-50MT060TFT
MODULES IGBT - MTP SWITCH
VS-GT50YF120NT
ECONO - 4 PACK IGBT
VS-GB150YG120NT
IGBT MOD 1200V 182A ECONO3 4PACK
