VS-GB50TP120N
IGBT MOD 1200V 100A INT-A-PAKManufacturer: Vishay General Semiconductor - Diodes Division
Categories: IGBT Modules
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Vishay General Semiconductor - Diodes Division VS-GB50TP120N is a Half Bridge Insulated Gate Bipolar Transistor (IGBT) module designed for robust power applications. This module features a 1200 V collector-emitter breakdown voltage and a continuous collector current (Ic) rating of 100 A. The Vce(on) is specified at a maximum of 2.15V at 15V Vge and 50A Ic, with a maximum power dissipation of 446 W. Input capacitance (Cies) is 4.29 nF at 25 V. The module is housed in an INT-A-PAK package suitable for chassis mounting and operates at a maximum junction temperature of 150°C. This component is commonly utilized in industrial automation, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | INT-A-PAK (3 + 4) |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 50A |
| NTC Thermistor | No |
| Supplier Device Package | INT-A-PAK |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 446 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 4.29 nF @ 25 V |
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