VS-GB400TH120N
IGBT MOD 1200V 800A INT-A-PAKManufacturer: Vishay General Semiconductor - Diodes Division
Categories: IGBT Modules
Quality Control: Learn More
Vishay General Semiconductor - Diodes Division VS-GB400TH120N is a Half Bridge IGBT Module with a 1200 V collector-emitter breakdown voltage. This device offers a continuous collector current (Ic) of 800 A and a maximum power dissipation of 2604 W. The on-state voltage (Vce(on)) is typically 1.9 V at 15 V gate-emitter voltage and 400 A collector current. Featuring a robust Double INT-A-PAK package for chassis mounting, this module is designed for demanding applications. The input capacitance (Cies) is rated at 32.7 nF at 25 V. Operating temperature ranges from -40°C to 150°C (TJ). This component is commonly utilized in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Double INT-A-PAK (3 + 4) |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 400A (Typ) |
| NTC Thermistor | No |
| Supplier Device Package | Double INT-A-PAK |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 800 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 2604 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 32.7 nF @ 25 V |
Request a Quote
Clients Also Buy
VS-GB75LA60UF
IGBT MOD 600V 109A 447W SOT227
VS-GT100DA120UF
IGBT MOD 1200V 187A 890W SOT227
VS-GT50TP120N
IGBT MOD 1200V 100A INT-A-PAK
