VS-GB300TH120N
IGBT MOD 1200V 500A INT-A-PAKManufacturer: Vishay General Semiconductor - Diodes Division
Categories: IGBT Modules
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Vishay General Semiconductor - Diodes Division VS-GB300TH120N is a Half Bridge Insulated Gate Bipolar Transistor (IGBT) module designed for high-power applications. This module features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 500 A, with a power dissipation rating of 1645 W. The Vce(on) is specified at 2.45V at 15V gate-emitter voltage and 300A collector current. It includes a standard input and an input capacitance (Cies) of 21.2 nF at 25 V. The module operates at a maximum junction temperature of 150°C and is housed in a Double INT-A-PAK package for chassis mounting. This component is utilized in industries such as industrial automation, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Double INT-A-PAK (3 + 4) |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 300A |
| NTC Thermistor | No |
| Supplier Device Package | Double INT-A-PAK |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 500 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 1645 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 21.2 nF @ 25 V |
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