VS-GB200TH120U
IGBT MOD 1200V 330A INT-A-PAKManufacturer: Vishay General Semiconductor - Diodes Division
Categories: IGBT Modules
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The Vishay General Semiconductor - Diodes Division VS-GB200TH120U is a high-power IGBT module featuring a half-bridge configuration. This device offers a robust 1200V collector-emitter breakdown voltage and a continuous collector current capability of 330A, with a maximum power dissipation of 1316W. It is designed for chassis mounting within the Double INT-A-PAK package, facilitating efficient thermal management. The module exhibits a typical on-state voltage (Vce(on)) of 3.6V at 15V gate-emitter voltage and 200A collector current. Input capacitance (Cies) is rated at 16.9 nF at 30V. This IGBT module is suitable for demanding applications in industrial power conversion, motor drives, and power supply systems. The operating junction temperature is rated up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Double INT-A-PAK (3 + 4) |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 200A |
| NTC Thermistor | No |
| Supplier Device Package | Double INT-A-PAK |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 330 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 1316 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 16.9 nF @ 30 V |
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