VS-GB200TH120N
IGBT MOD 1200V 360A INT-A-PAKManufacturer: Vishay General Semiconductor - Diodes Division
Categories: IGBT Modules
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Vishay General Semiconductor - Diodes Division offers the VS-GB200TH120N, a robust IGBT Module configured as a Half Bridge. This device features a substantial 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 360 A, with a maximum power dissipation of 1136 W. The VS-GB200TH120N is designed for demanding applications requiring efficient power switching, such as industrial motor drives, renewable energy systems, and electric vehicle powertrains. Its Double INT-A-PAK package facilitates chassis mounting for effective thermal management, operating at junction temperatures up to 150°C. The module exhibits a Vce(on) of 2.35V at a gate-emitter voltage of 15V and collector current of 200A, with an input capacitance (Cies) of 14.9 nF @ 25V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Double INT-A-PAK (3 + 4) |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 200A |
| NTC Thermistor | No |
| Supplier Device Package | Double INT-A-PAK |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 360 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 1136 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 14.9 nF @ 25 V |
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