VS-GB100TP120N
IGBT MOD 1200V 200A INT-A-PAKManufacturer: Vishay General Semiconductor - Diodes Division
Categories: IGBT Modules
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Vishay General Semiconductor - Diodes Division VS-GB100TP120N is a Half Bridge IGBT module with a 1200 V collector-emitter breakdown voltage and a maximum collector current of 200 A. This chassis-mount device delivers 650 W of maximum power dissipation and features a low Vce(on) of 2.2 V at 15 V gate-source voltage and 100 A collector current. Input capacitance (Cies) is 7.43 nF at 25 V. The module operates at junction temperatures up to 150°C and is housed in the INT-A-PAK package. This component is suitable for applications in industrial automation, motor drives, and power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | INT-A-PAK |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 100A |
| NTC Thermistor | No |
| Supplier Device Package | INT-A-PAK |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 650 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 7.43 nF @ 25 V |
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